Irreversible reaction

Carbothermal reduction of silica to silicon carbide (Acheson furnace)

SiO2+3CgivesSiC+2CO

Direction
Irreversible
Processes
1
Stated as
Fixed conversion
Heat of reaction
ΔH = 618,300 kJ/kmol (one process)
Element balance
Checked: balances
As the processes state itStoichiometry, conversions, heats of reaction and catalyst windows are taken from each process's files with their provenance. The build checks only that each process's equation balances in every element, from the process's own component formulas; it does not check the numbers. A process's design maturity applies to them.

Species

SpeciesNameCASRoleCoefficient
SiO2Silica14808-60-7reactant-1
CCarbon7440-44-0reactant-3
SiCSilicon carbide409-21-2product1
COCarbon monoxide630-08-0product2

In the processes

  • RX1 · Carbothermal reduction of silica to silicon carbide (Acheson furnace)SiO2(s) + 3 C(s) → SiC(s) + 2 CO(g)

    Stated as
    Fixed conversion
    Phase
    mixed
    Element balance
    Balances in every element
    Conversion
    50.56 % of SiO2 (assumed: scripts/sic_balance.py: SiC formed = SiC leaving the loop in crude, metallurgical SiC and purge, over the SiO2 of the charge (D-006))
    Heat of reaction
    ΔH = 618,300 kJ/kmol at 298.15 K, as written (assumed: formation enthalpies SiC(s) -71.6, CO(g) -110.5, SiO2(quartz) -910.9 kJ/mol (NIST-JANAF, D-007))

Sources

What the processes cite for this reaction, each source once: for the reaction itself, its conversion, its heat of reaction or its catalyst. As the processes write them; DOIs, US patent numbers and web addresses are linked.

  1. scripts/sic_balance.py: SiC formed = SiC leaving the loop in crude, metallurgical SiC and purge, over the SiO2 of the charge (D-006)

    For the conversion · cited by Silicon carbide by the Acheson process (5000 kg/h crude SiC, concept)

  2. formation enthalpies SiC(s) -71.6, CO(g) -110.5, SiO2(quartz) -910.9 kJ/mol (NIST-JANAF, D-007)

    For the heat of reaction · cited by Silicon carbide by the Acheson process (5000 kg/h crude SiC, concept)